SIA910EDJ-T1-GE3

Manufacture
Vishay Siliconix
Manufacture Product Number
SIA910EDJ-T1-GE3
Description

MOSFET 2N-CH 12V 4.5A PPAK8X8

Category
Datasheet
All Prices are in EUR

1.18

Tape & Reel (TR),Cut Tape (CT)

18 in stock

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Product Attributes

Type

Description

Manufacture
Vishay Siliconix
Series
TrenchFET®
Packaging
Tape & Reel (TR),Cut Tape (CT)
Description
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Power (Max): 7.8W
Structure : Logic Level Gate
Current - Continous Drain (Id) : 4.5A
Rds On (Max) @ Id, Vgs : 28mOhm @ 5.2A, 4.5V
Drain to Source Voltage (Vdss) : 12V
Technology : MOSFET (Metal Oxide)
Supplier Device Package
PowerPAK® SC-70-6 Dual
Datasheet

Environmental & Export Classifications

Attribute

Description

RoHS Status
REACH Status