IRF7341TRPBFXTMA1

Manufacture
Infineon Technologies
Manufacture Product Number
IRF7341TRPBFXTMA1
Description

MOSFET 2N-CH 55V 4.7A 8DSO-902

Category
Datasheet
All Prices are in EUR

1.96

Tape & Reel (TR),Cut Tape (CT)

11 in stock

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Product Attributes

Type

Description

Manufacture
Infineon Technologies
Series
HEXFET®
Packaging
Tape & Reel (TR),Cut Tape (CT)
Description
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel
Power (Max): 2W (Tc)
Structure : Logic Level Gate
Current - Continous Drain (Id) : 4.7A (Tc)
Rds On (Max) @ Id, Vgs : 50mOhm @ 4.7A, 10V
Drain to Source Voltage (Vdss) : 55V
Technology : MOSFET (Metal Oxide)
Supplier Device Package
PG-DSO-8-902
Datasheet

Environmental & Export Classifications

Attribute

Description

RoHS Status
REACH Status