SiC MOSFET Module

– High-Power, High-Efficiency Solution
Enhance your power electronics with our SiC MOSFET Module, designed for superior efficiency, high-speed switching, and robust thermal performance. Featuring different packages, integrated body diode, and NTC (Negative Temperature Coefficient) sensor, this module ensures low conduction losses, minimal switching losses, and precise temperature monitoring for improved reliability.
Ideal for industrial power supplies, electric vehicle (EV) inverters, renewable energy systems, and motor drives, this SiC module enables compact, high-efficiency designs with reduced heat dissipation and extended system lifespan.
Upgrade to the latest in Silicon Carbide (SiC) technology and achieve superior power performance with GlobalChipSupply!

Showing 1 - 20 out of 46

Page 1 out of 3

Thumbnails Products Description Quantity Package Price Action Manufacture ID (A) Vds (V)
Placeholder
SiC Module 1200V 300A ME2
ME2
€390.40
Seestern Semicon
300
1200
Placeholder
SiC Module 1200V 30A D21
D21
€40.00
Seestern Semicon
30
1200
Placeholder
SiC Module 1200V 100A EP
EP
€80.00
Seestern Semicon
100
1200
Placeholder
SiC Module 1200V 100A ME3
ME3
€80.00
Seestern Semicon
100
1200
Placeholder
SiC Module 1200V 100A MEK6
MEK6
€80.00
Seestern Semicon
100
1200
Placeholder
SiC Module 1200V 100A MEP
MEP
€80.00
Seestern Semicon
100
1200
Placeholder
SiC Module 1700V 100A ME2
ME2
€600.00
Seestern Semicon
100
1700
Placeholder
SiC Module 1700V 100A MEK6
MEK6
€600.00
Seestern Semicon
100
1700
Placeholder
SiC Module 1200V 200A EP
EP
€149.20
Seestern Semicon
200
1200
Placeholder
SiC Module 1700V 200A ME3
ME3
€700.00
Seestern Semicon
200
1700
Placeholder
SiC Module 650V 200A EP
EP
€30.00
Seestern Semicon
200
650
Placeholder
SiC Module 1200V 300A MD3
MD3
€390.40
Seestern Semicon
300
1200
Placeholder
SiC Module 1200V 300A MEP
MEP
€390.40
Seestern Semicon
300
1200
Placeholder
SiC Module 1700V 300A MED
MED
€800.00
Seestern Semicon
300
1700
Placeholder
SiC Module 650V 300A MEP
MEP
€50.00
Seestern Semicon
300
650
Placeholder
SiC Module 1200V 30A ME2
ME2
€40.00
Seestern Semicon
30
1200
Placeholder
SiC Module 1200V 400A DSC12
DSC12
€169.89
Seestern Semicon
400
1200
Placeholder
SiC Module 1200V 400A HPD
HPD
€169.89
Seestern Semicon
400
1200
Placeholder
SiC Module 1200V 400A MED
MED
€169.89
Seestern Semicon
400
1200
Placeholder
SiC Module 1200V 400A MEK6
MEK6
€500.00
Seestern Semicon
400
1200
1 2 3
1200V 960A Full-Bridge and 400A Half-Bridge SiC MOSFET Module – High-Efficiency Power Switching
Optimize your power electronics with our 1200V 400A Half-Bridge SiC MOSFET Module, engineered for high efficiency, fast switching, and superior thermal performance. Built with advanced Silicon Carbide (SiC) technology, this module delivers low switching losses, high power density, and robust reliability, making it an ideal choice for demanding applications.
Featuring a half-bridge configuration, this module is perfect for industrial power conversion, motor drives, renewable energy inverters, and electric vehicle (EV) power systems. With enhanced thermal management and reduced conduction losses, it enables compact designs, lower energy consumption, and extended system lifespan.
Upgrade to cutting-edge SiC power solutions with GlobalChipSupply and maximize performance in your high-power applications!