SI3590DV-T1-E3

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Manufacture
Vishay Siliconix
Manufacture Product Number
SI3590DV-T1-E3
Description

MOSFET N/P-CH 30V 2.5A 6TSOP

Category
Datasheet

Datasheet download

All Prices are in EUR

€1.61

Tape & Reel (TR),Cut Tape (CT)

17 in stock

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Product Attributes

Type

Description

Manufacture
Vishay Siliconix
Series
TrenchFET®
Packaging
Tape & Reel (TR),Cut Tape (CT)
Description
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Power (Max): 830mW
Structure : Logic Level Gate
Current - Continous Drain (Id) : 2.5A, 1.7A
Rds On (Max) @ Id, Vgs : 77mOhm @ 3A, 4.5V
Drain to Source Voltage (Vdss) : 30V
Technology : MOSFET (Metal Oxide)
Supplier Device Package
6-TSOP
Datasheet
Datashee download

Environmental & Export Classifications

Attribute

Description

RoHS Status
REACH Status