SI5504BDC-T1-E3

Manufacture
Vishay Siliconix
Manufacture Product Number
SI5504BDC-T1-E3
Description

MOSFET N/P-CH 30V 4A/3.7A 1206-8

Datasheet
All Prices are in EUR

1.91

Tape & Reel (TR),Cut Tape (CT)

11 in stock

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Product Attributes

Type

Description

Manufacture
Vishay Siliconix
Series
TrenchFET®
Packaging
Tape & Reel (TR),Cut Tape (CT)
Description
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Power (Max): 3.12W, 3.1W
Structure : Logic Level Gate
Current - Continous Drain (Id) : 4A, 3.7A
Rds On (Max) @ Id, Vgs : 65mOhm @ 3.1A, 10V
Drain to Source Voltage (Vdss) : 30V
Technology : MOSFET (Metal Oxide)
Supplier Device Package
1206-8 ChipFET™
Datasheet

Environmental & Export Classifications

Attribute

Description

RoHS Status
REACH Status